2SC2565 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SC2565

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

V(BR)CEO= 160V(Min)

·Good Linearity of hFE

·Complement to Type 2SA1095

APPLICATIONS

·Designed for general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1.5

A

150

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SC2565

SPTECH website：www.superic-tech.com

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