2SC2565 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

部品番号

コンポーネント説明

メーカー

2SC2565

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

ICBO

Collector Cutoff Current

VCB= 160V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

hFE 1

DC Current Gain

IC= 1A; VCE= 5V

hFE 2

DC Current Gain

IC= 5A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V;ftest= 1.0MHz

fT

Current-Gain—Bandwidth Product

IE= 1A; VCE= 10V

hFE 1 Classifications

K

O

Y

55-110 80-160 120-240

2SC2565

MIN TYP. MAX UNIT

160

V

2.0

V

5

μA

5

μA

55

240

40

200

pF

25

MHz

SPTECH website：www.superic-tech.com

2

Share Link: