2N7002KW データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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2N7002KW Datasheet PDF : 5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2N7002KW
V(BR)DSS
9
N-Channel MOSFET
RDS(on)MAX
ȍ#9
ȍ#9
ID
P$
SOT-323
3
1. GATE
2. SOURCE
1
3. DRAIN
2
FEATURE
z High density cell design for Low RDS(on)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z ESD protected
M$5.,1*
APPLICATION
z /RDG 6ZLWFK IRU 3RUWDEOH 'HYLFHV
z '&'& &RQYHUWHU
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta=25Я unless otherwise noted)
Symbol
VDS
V*S
ID
IDM
PD
Tj
Tstg
RșJA
Parameter
Drain-Source Voltage
*DWH-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance from Junction to Ambient
Value
60
±0
340
800
0.2
150
-55~+150
625
Unit
V
V
mA
mA
W
Я
Я
Я/W
ZZZFMHOHFFRP
IAug6
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