2N7002KW データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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2N7002KW Datasheet PDF : 5 Pages
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Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source Breakdown Voltage
V (BR) DSS VGS = 0V, ID =250μA
GateThreshold Voltage (note 2)
VGS(th)
VDS =VGS, ID =1mA
Zero Gate Voltage Drain Current
IDSS
VDS =48V,VGS = 0V
Gate-Source Leakage Current
IGSS
VGS =±20V, VDS = 0V
Drain-Source On-Resistance (note 2)
RDS(on)
VGS =4.5V, ID =200mA
VGS =10V, ID =500mA
DYNAMIC PARAMETERS (note 3)
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS(note 3)
Coss
Crss
VDS =10V,VGS =0V,f =1MHz
Turn-on Delay Time
Turn-off Delay Time
td(on)
td(off)
VGS=10V,VDD=50V, RG=50ȍ
RGS=50ȍ, RL=250ȍ
Reverse Recovery Time
VGS=0V,IS=300mA,VR=25V,
trr
dIs/dt=-100A/us
Recovered Charge
VGS=0V,IS=300mA,VR=25V
Qr
dIs/dt=-100A/us
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
DRAIN-SOURCE DIODE
BVGSO Igs=f1mA(Open Drain)
Diode Forward Voltage(note 2)
VSD
IS=300mA, VGS = 0V
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current(note1)
ISM
Notes :
1. Repetitive rating˖Pluse width limited by junction temperature.
2. Pulse Test : Pulse width300μs, duty cycle%.
3. Guaranteed by design, not subject to production testing.
Min
Typ Max Unit
60
V
1
1.3
V
1
μA
±10 μA
1.1 5.3
0.9
5
40
pF
30
pF
10
pF
10
ns
15
ns
30
ns
30
nC
f21.5
f30
V
1.5
V
0.2
A
0.53
A
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