2N7002KFN3 データシートの表示（PDF） - PANJIT INTERNATIONAL
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2N7002KFN3 Datasheet PDF : 5 Pages
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2N7002KFN3
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C urrent
Gate Body Leakage
Forward Transconductance
Dynamic
S ym b o l
B V DSS
V GS(th)
R D S (o n)
R D S (o n)
ID S S
IGSS
g fS
To ta l Ga te C ha r g e
Tur n- On D e la y Ti me
Turn-Off D e la y Ti me
Input C apaci tance
Output Capacitance
Re ve rse Tra ns fe r
C a p a c i ta nce
Source-Drain Diode
Diode Forward Voltage
C ontinuous Diode Forward
C urrent
Pulsed Diode Forward
C urrent
Qg
ton
toff
C iss
C oss
C rss
VSD
Is
IsM
Te s t C o nd i ti o n
V GS=0 V, ID=1 0 μA
V DS=V GS, ID=2 5 0 μA
VGS=4.5V, I D=200mA
VGS=10V, I D=500mA
VDS=60V, VGS=0V
VGS=+20V, VDS=0V
V DS=15V, ID=250mA
V DS=15V, ID=200mA
VGS=4.5V
V =30V , R =150Ω
DD
L
ID=200mA , VGEN=10V
RG=10Ω
V DS=25V, V GS=0V
f=1.0MHZ
IS=2 0 0 mA , V GS=0 V
-
-
Mi n. Typ .
60
-
1
-
-
-
-
-
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.82
-
-
-
-
Switching
Test Circuit
VIN
VDD
Gate Charge
Test Circuit
RL
VGS
VOUT
Max. Units
-
V
2.5
V
4.0
Ω
3.0
1
μA
+10
μA
-
mS
0.8
nC
20
ns
40
35
10
pF
5
1.3
V
115
mA
800
mA
VDD
RL
RG
1mA
RG
September 03.2010-REV.00
PAGE . 2
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