C3310 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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C3310 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 3A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.4A
RL= 50Ω;VCC≈200V
PW=20μs;Duty Cycle≤1%
2SC3310
MIN TYP. MAX UNIT
400
V
500
V
1.0
V
1.5
V
100 μA
1
mA
12
8
1.0 μs
2.5 μs
1.0 μs
SPTECH website：www.superic-tech.com
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