SPTECH Product Specification
SPTECH Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT
Current-Gain—Bandwidth Product
IC= -30mA; IB= 0
IC= -1A; IB= -0.125A
IC= -1A; VCE= -4V
VCE= -40V; VBE= 0
VCE= -30V; IB= 0
VEB= -5V; IC= 0
IC= -0.2A; VCE= -4V
IC= -1A ; VCE= -4V
IC= -0.2A; VCE= -10V; f= 1MHz
TIP30
MIN MAX UNIT
-40
V
-0.7
V
-1.3
V
-0.2 mA
-0.3 mA
-1.0 mA
40
15
75
3
MHz
SPTECH website:www.superic-tech.com
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