TIP30D データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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TIP30D

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·DC Current Gain-

: hFE = 20(Min)@ IC= -0.2A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -120V(Min)

·Complement to Type TIP29D

APPLICATIONS

·Designed for use in general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-base Voltage

-160

V

VCEO Collector-emitter Voltage

-120

V

VEBO

Emitter-base Voltage

-5

V

IC

Collector Current-Continuous

-1

A

ICM

Collector Current-Pulse

-3

A

IB

Base Current

Collector Power Dissipation

PC

TC=25℃

Collector Power Dissipation

Ta=25℃

Tj

Junction Temperature

-0.4

A

30

w

2

150

℃

Tstg

Storage Ttemperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

4.17 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W

SPTECH website：www.superic-tech.com

TIP30D

1

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