C3159 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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C3159

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 1.0V(Max.)@IC= 6A

·Fast Switching Speed

APPLICATIONS

·Designed for switching regulator, DC-DC converter and high

frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

20

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

5.0

A

80

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SC3159

SPTECH website：www.superic-tech.com

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