MMBT3904WT1(2004) データシートの表示（PDF） - ON Semiconductor
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MMBT3904WT1 Datasheet PDF : 12 Pages
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MMBT3904WT1, NPN
MMBT3906WT1, PNP
General Purpose
Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
MMBT3904WT1
MMBT3906WT1
VCEO
Vdc
40
−40
Collector −Base Voltage
MMBT3904WT1
MMBT3906WT1
VCBO
Vdc
60
−40
Emitter −Base Voltage
MMBT3904WT1
MMBT3906WT1
VEBO
Vdc
6.0
−5.0
Collector Current − Continuous
IC
MMBT3904WT1
MMBT3906WT1
200
−200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction to Ambient
PD
RqJA
150
mW
833
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
MMBT3904WT1
MMBT3906WT1
AM M
2A M
AM = Specific Device Code
2A = Specific Device Code
M = Date Code
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 4
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3904WT1 SC−70 3000/Tape & Reel
MMBT3906WT1 SC−70 3000/Tape & Reel
MMBT3904WT1G SC−70 3000/Tape & Reel
MMBT3906WT1G SC−70 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
MMBT3904WT1/D
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