2SA966 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SA966

TO-92MOD Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JC(T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors

2SA966 TRANSISTOR (PNP)

FEATURE

Complementary to 2SC2236 and 3 Watts output Applications.

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1.5

A

Pc

Collector Power Dissipation

0.9

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ Max Unit

Collector-base breakdown voltage

V(BR)CBO IC= -1mA , IE=0

-30

V

Collector-emitter breakdown voltage

V(BR)CEO IC= -10mA ,IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO IE= -1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -30V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V, IC= -500mA

100

320

Collector-emitter saturation voltage

VCE(sat)

IC= -1.5 A, IB= -0.03A

-2

V

Base-emitter voltage

Transition frequency

Collector output capacitance

VBE

IC= -500mA,VCE=-2V

fT

VCE= -2V, IC=-500mA

Cob

VCB=-10V, IE=0, f=1MHz

-1

V

120

MHz

30

pF

CLASSIFICATION OF hFE

Rank

Range

O

100-200

Y

160-320

www.cj-elec.com

1

C,Mar,2016

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