TIP42C データシートの表示（PDF） - New Jersey Semiconductor

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TIP42C

Complementary Silicon Plastic Power Transistors

New Jersey Semiconductor 

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 2)

(lc = 30 mAdc, IB = 0)

TIP41, TIP42 vCEO(sus)

40

TIP41A, TIP42A

60

TIP41B, TIP42B

80

TIP41C, TIP42C

100

Vdc

-

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

(VCE = 60 Vdc, IB = 0)

'CEO

TIP41, TIP41A, TIP42, TIP42A

TIP41 B, TIP41 C, TIP42B, TIP42C

mAdc

-

0.7

0.7

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)

(VCE = 60 Vdc, VEB = 0)

(VCE = 80 Vdc, VEB = 0)

(VCE = 100 Vdc, VEB = 0)

ICES

, TIP41 , TIP42

TIP41A, TIP42A

TIP41B, TIP42B

TIP41C, TIP42C

nAdc

400

-

400

400

400

Emitter Cutoff Current (VBE = 5.0 Vdc,lc =0)

IEBO

-

1.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (lc = 0.3 Adc, VCE = 4.0 Vdc)

(lc = 3.0 Adc, VCE= 4.0 Vdc)

HFE

30

-

15

75

Collector-Emitter Saturation Voltage (lc = 6.0 Adc, IB = 600 mAdc)

Base-Emitter On Voltage (lc = 6.0 Adc, VCE = 4.0 Vdc)

vCE(sat)

VBE(OH)

-

1.5

Vdc

-

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain — Bandwidth Product (lc = 500 mAdc, VCE = 10 Vdc, ftest = 1 .0 MHz)

fT

Small-Signal Current Gain (lc = 0.5 Adc, VCE = 10 Vdc, f = 1 .0 kHz)

hte

3.0

-

MHz

20

-

-

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