TIP2955 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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TIP2955

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-

: hFE=20-70@IC = -4A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -1.1 V(Max)@ IC = -4A

·Complement to Type TIP3055

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-15

A

IB

Base Current

-7

A

PC

Collector Power Dissipation TC=25℃

90

W

Tj

Junction Tmperature

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE UNIT

Rth j-c Thermal Resistance,Junction to Case

1.39 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W

SPTECH website：www.superic-tech.com

TIP2955

1

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