B1017 データシートの表示（PDF） - New Jersey Semiconductor
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B1017 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A
VsE(on) Base-Emitter On Voltage
lc= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V;lc= 0
hfE-1 DC Current Gain
lc= -0.5A; VCE=.J5V
hFE-2
DC Current Gain
lc= -3A; VCE= -5V
COB
Output Capacitance
lE=0;Vce=-10V;f=1MHz
ft
Current-Gain—Bandwidth Product
lc= -0.5A; VCE= -5V
E -1 Classifications
R
0
Y
40-80
70-140 120-240
2SB1017
MIN TYP. MAX UNIT
-80
V
-1.7
V
-1.5
V
-30 M A
-0.1 mA
40
240
15
130
PF
9
MHz
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