B1017 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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B1017 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
hFE-1 Classifications
R
O
Y
40-80 70-140 120-240
2SB1017
MIN TYP. MAX UNIT
-80
V
-1.7 V
-1.5 V
-30 μA
-0.1 mA
40
240
15
130
pF
9
MHz
SPTECH website：www.superic-tech.com
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