MTD5P06V(2003) データシートの表示（PDF） - ON Semiconductor
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MTD5P06V Datasheet PDF : 8 Pages
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MTD5P06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
60
−
−
61.2
Vdc
−
−
mV/°C
IDSS
µAdc
−
−
10
−
−
100
IGSS
−
−
100
nAdc
VGS(th)
Vdc
2.0
2.8
4.0
−
4.7
−
mV/°C
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 2.5 Adc)
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 5 Adc)
(VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150°C)
Forward Transconductance
(VDS = 15 Vdc, ID = 2.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 5 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 5 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 5 Adc, VGS = 0 Vdc)
(IS = 5 Adc, VGS = 0 Vdc, TJ = 150°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
−
0.34
0.45
Ohm
Vdc
−
−
2.7
−
−
2.6
1.5
3.6
Mhos
−
−
367
510
pF
−
140
200
−
29
60
−
11
20
ns
−
26
50
−
17
30
−
19
40
−
12
20
nC
−
3.0
−
−
5.0
−
−
5.0
−
Vdc
−
1.72
3.5
−
1.34
−
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
−
97
−
ns
−
73
−
−
24
−
−
0.42
−
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
nH
−
4.5
−
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
nH
−
7.5
−
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