2SC945 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SC945 Datasheet PDF : 4 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SC945
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1 μA
Collector cut-off current
ICEO
VCE=50V,IB=0
0.1 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
VEB=5V,IC=0
VCE=6V,IC=1mA
VCE=6V,IC=0.1mA
IC=100mA, IB=10mA
0.1 μA
130
400
40
0.15 0.3 V
Base-emitter saturation voltage
Base to Emitter Voltage
Transition frequency
Collector output capacitance
Noise figure
VBE(sat)
VBE
fT
Cob
NF
IC=100mA, IB=10mA
0.86 1 V
VCE=6V, IC=1.0mA
VCE=6V, IC=10mA
f=30MHz
VCB=10V,IE=0,f=1MHz
VCE=6V, IC=0.1mA
f=1kMHz,Rg=10kΩ
0.55 0.62 0.65 V
150
MHz
3.0 4.0 pF
4
10 dB
CLASSIFICATION OF hFE(1)
Rank
Range
L
130-200
H
200-400
C017
Rev.A
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