2SC945 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC945 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Transistor
2SC945
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ; IB= 10mA
MIN
TYP.
MA UNI
XT
0.15 0.3 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 100mA ; IB= 10 mA
0.86 1.0 V
VBE
Base -Emitter Voltage
IC= 1.0mA ; VCE= 6V
0.55
0.65 V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1 μA
hFE1
DC Current Gain
IC= 0.1mA ; VCE= 6V
50 185
hFE2
DC Current Gain
IC= 1.0mA ; VCE= 6V
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 6V;
Cob
Collector-Base Capacitance
VCB=6V; IE=0; f=1.0MHz
90 200 600
150
250
450
MH
z
3
4 pF
NF
Noise Figure
IC= 0.1mA ; VCE= 6V,f=1kHz;RG=2kΩ
0.8 15 dB
hFE2 Classifications
R
O
P
K
90-180 135-270 200-400 300-600
SPTECH website：www.superic-tech.com
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