2SK3018 データシートの表示（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

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2SK3018

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SK3018

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

符号

Symbol

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

Drain Current – Continuous

ID

Drain Current- Pulsed

IDP*1

Reverse Drain Current – Continuous

Reverse Drain Current –Pulsed

Total Power Dissipation

IDR

IDRP*1

PD*2

Channel Temperature

Tch

Storage Temperature Range

Tstg

*1:Pw≤10μs, Duty cycle≤50%

*2:With each pin mounted on the recommended lands

数值

Rating

30

±20

100

200

100

200

250

150

-55～150

单位

Unit

V

V

mA

mA

mA

mA

mW

V

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Drain–Source Breakdown Voltage

Gate Threshold Voltage

Static Drain–Source

On–Resistance

Zero Gate Voltage Drain Current

Gate–Body Leakage.

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

符号

Symbol

V(BR)DSS

VGS(th)

RDS(on)1

RDS(on)2

IDSS

IGSS

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

测试条件

Test Conditions

VGS=0V

ID=10μA

VDS=3.0V ID=100μA

VGS=4.0V ID=10mA

V0047S=2.5V ID=1.0mA

VDS=30V VGS=0V

VGS=±20V VDS=0V

VDS=3V

ID=10mA

VDS=5.0V VGS=0V

f=1.0MHz

ID=10mA

VGS=5.0V

RGS=10Ω

VDD≈5.0V

RL=500Ω

最小值 典型值

Min Typ

30

0.8

5.0

7.0

20

13

9.0

4.0

15

35

80

80

最大值

Max

1.5

8.0

13

1.0

±1

单位

Unit

V

V

Ω

μA

μA

mS

pF

ns

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