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STK7565A_ データシートの表示(PDF) - SANYO -> Panasonic

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STK7565A_ Datasheet PDF : 13 Pages
First Prev 11 12 13
STK7560 Series
where Tj max=150°C, Pd : Power dissipation PT1, PF1, PT2, PF2 in each element,
θjc=Junction-case thermal resistance in each element.
Type No.
STK7560A
Table of Thermal Resistance θjc
OUTPUT 1
OUTPUT 2
TR1 D3 TR6 D4
4.9 12.5 4.9 12.5
STK7560F
STK7560G
4.7 12.5 2.7
5.5
STK7560J
2.7
5.5
4.7 12.5
To dessipate heat satisfactorily, use a heat sink with thermal resistance θca meeting two temperature conditions of
Tc max=105°C, Tj max=105°C.
Since the actual thermal resistance of the heat sink
greatly depends on various conditions such as equip-
ment layout or ventilation, allow an ample margin in
thermal design. Shown right is the relation between Al
heat sink area and thermal resistance. The Al surface
coated with black improves thermal characteristic,
lowering thermal resistance approximately 20% as
compared with the Al heat sink of the same area.
Description of Operation of Internal Blocks
[OSC]
External excitation type OSC circuit where the CMOS NAND
gate-used ring OSC is formed by the 2-stage NAND circuit,
delivering basic pulses. This circuit provides pulse width modula-
tion where the frequency is constant and the duty only varies.
[PWM]
Pulse width modulation (PWM) is provided by differentiating the
output of NAND gate 2 using the differentiating circuit of time
constant CR as shown left and by applying the result to the input of
NAND gate 3.
The threshold voltage at the input of NAND gate 3 is approxi-
mately 1/2 of supply voltage VDD applied to the gate and the PWM
output as shown below is obtained.
No.1773–11/13

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