KTD1304 データシートの表示（PDF） - Shenzhen Luguang Electronic Technology Co., Ltd
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KTD1304 Datasheet PDF : 2 Pages
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KTD1304
NPN Silicon Epitaxial Planar Transistor
FEATURES
z High emitter-base voltage.
z High reverse hFE.
z Low on resistance.
APPLICATIONS
z Audio muting application.
ORDERING INFORMATION
Type No.
Marking
KTD1304
MAX
A
K
D
G
C
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
25
VCEO
Collector-Emitter Voltage
20
VEBO
Emitter-Base Voltage
12
IC
Collector Current -Continuous
300
IB
Base Current
30
PC
Collector Power Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mA
mW
℃
E
B
J
H
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
25
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
12
V
Collector cut-off current
Emitter cut-off current
ICBO
VCB=25V,IE=0
IEBO
VEB=12V,IC=0
0.1 μA
0.1 μA
DC current gain
hFE
VCE=2V,IC=4mA
200
800
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA
0.25 V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1
V
Transition frequency
Collector output capacitance
fT
VCE=10V, IC= 1mA
Cob
VCB=10V,IE=0,f=1MHz
60
MHz
10 pF
SOT-23
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
1.0 Typical
D
0.4 Typical
E
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
0.1 Typical
K
2.20
2.60
All Dimensions in mm
Revision:20170701-P1
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mail:lge@lgesemi.com
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