BSS138Q-7-F データシートの表示（PDF） - Diodes Incorporated.

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BSS138Q-7-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Drain-Gate Voltage RGS  20K

Gate-Source Voltage

Continuous

Gate-Source Voltage

Non Repetitive, Pulse Width<50s

Drain Current

Continuous

Pulsed Drain Current (10μs Pulse Duty Cycle = 1%)

Symbol

VDSS

VDGR

VGSS

ID

IDM

Value

50

50

20

40

200

1

BSS138

Unit

V

V

V

V

mA

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

Symbol

PD

RJA

TJ, TSTG

Value

300

417

-55 to +150

Unit

mW

C/W

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

Symbol Min Typ Max Unit

Test Condition

BVDSS 50 75



V VGS = 0V, ID = 250A

IDSS

  0.5 µA VDS = 50V, VGS = 0V

IGSS

  100 nA VGS = 20V, VDS = 0V

VGS(TH) 0.5 1.2 1.5 V VDS = VGS, ID = 250A

RDS(ON)  1.4 3.5  VGS = 10V, ID = 0.22A

gFS

100   mS VDS = 25V, ID = 0.2A, f = 1.0KHz

Ciss

Coss

Crss

  50 pF

  25 pF VDS = 10V, VGS = 0V, f = 1.0MHz

  8.0 pF

tD(ON)

tD(OFF)









20

20

ns

ns VDD = 30V, ID = 0.2A, RGEN = 50

Notes:

5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Incorporated’s suggested pad layout, which can be found on our

website at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

0.6

TjJ==225°5C°C

0.5

0.4

0.3

0.2

0.1

VGS = 3.5V

VGS = 3.25V

VGS = 3.0V

VGS = 2.75V

VGS = 2.5V

0

0 1 2 3 4 5 6 7 8 9 10

VDS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Drain-Source Current vs. Drain-Source Voltage

0.8

VDS = 1V

0.7

0.6

0.5

0.4

-55°C

25°C

150°C

0.3

0.2

0.1

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

VGS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Transfer Characteristics

BSS138

Document number: DS30144 Rev. 22 - 2

2 of 5

www.diodes.com

October 2019

© Diodes Incorporated

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