NTE2318 データシートの表示（PDF） - NTE Electronics

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NTE2318

Silicon NPN Transistor High Voltage, High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

IC = 4.5A, VCE = 5V

IC = 4.5A, IB = 2A

IC = 4.5A, IB = 2A

2.25 – –

––1V

– – 1.3 V

Current–Gain Bandwidth Product

Output Capacitance

Switching Characteristics

fT

IC = 0.1A, VCE = 5V, f = 1MHz –

7

– MHz

Cob VCB = 10V, IE = 0, f = 0.1MHz – 125 – pF

Storage Time

Fall Time

ts

IC = 4.5A, IB = 1.8A,

tf

LB = 10µH

– 8.0 – µs

– 0.5 – µs

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.

.600

(15.24)

C

.060 (1.52)

.173 (4.4)

.156

(3.96)

Dia.

BCE

.550

(13.97) .430

(10.92)

.500

(12.7)

Min

.055 (1.4)

.216 (5.45)

.015 (0.39)

NOTE: Dotted line indicates that

case may have square corners

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