TPSMA11AHE3_B/H データシートの表示（PDF） - Vishay Semiconductors

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TPSMA11AHE3_B/H

Surface-Mount PAR® Transient Voltage Suppressors

Vishay Semiconductors 

www.vishay.com

TPSMA6.8A thru TPSMA43A

Vishay General Semiconductor

Surface-Mount PAR® Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

SMA (DO-214AC)

LINKS TO ADDITIONAL RESOURCES

3D 3D

3D Models

PRIMARY CHARACTERISTICS

VWM

5.8 V to 36.8 V

VBR

6.8 V to 43 V

PPPM

PD

IFSM

400 W

1.0 W

40 A

TJ max.

185 °C

Polarity

Uni-directional

Package

SMA (DO-214AC)

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lightning

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

FEATURES

• Junction passivation optimized design

passivated anisotropic rectifier technology

• TJ = 185 °C capability suitable for high reliability

and automotive requirement

• Available in uni-directional polarity only

Available

• 400 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

MECHANICAL DATA

Case: SMA (DO-214AC)

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, ...)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 3)

Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)

Power dissipation at TA = 25 °C (4)

Peak forward surge current 8.3 ms single half sine-wave (3)

Maximum instantaneous forward voltage at 25 A (3)

PPPM

IPPM

PD

IFSM

VF

400

See next table

1.0

40

3.5

Operating junction and storage temperature range

TJ, TSTG

-65 to +185

Notes

(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2

(2) Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal

(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum

(4) Mounted on minimum recommended pad layout

UNIT

W

A

W

A

V

°C

Revision: 20-Jul-2020

1

Document Number: 88405

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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