TPSMA11AHE3_B/H データシートの表示（PDF） - Vishay Semiconductors
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TPSMA11AHE3_B/H Datasheet PDF : 5 Pages
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TPSMA6.8A thru TPSMA43A
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1.0
0.1
0.1 µs
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
1.0 µs
10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Fig. 1 - Peak Pulse Power Rating Curve
10 000
1000
VR measured
at Zero Bias
100
10
1
VR measured at
Stand-Off, VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
100
VBR - Breakdown Voltage (V)
Fig. 4 - Typical Junction Capacitance
100
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
75
100
50
50
25
0
0
50
100
150
200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
Peak Value
where the Peak Current
100
IPPM
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
td 0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
10
1
5
10
50 100
Number of Cycles at 60 Hz
Fig. 5 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 20-Jul-2020
3
Document Number: 88405
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