19TQ015-M3 データシートの表示（PDF） - Vishay Semiconductors

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19TQ015-M3

High Performance Schottky Rectifier, 19 A

Vishay Semiconductors 

www.vishay.com

VS-19TQ015-M3

Vishay Semiconductors

High Performance Schottky Rectifier, 19 A

2

Base cathode

2

1

3

2L TO-220AC

1

Cathode

3

Anode

PRIMARY CHARACTERISTICS

IF(AV)

19 A

VR

VF at IF

IRM max.

15 V

0.32 V

522 mA at 100 °C

TJ max.

125 °C

EAS

6.75 mJ

Package

2L TO-220AC

Circuit configuration

Single

FEATURES

• 125 °C TJ operation (VR < 5 V)

• Optimized for OR-ing applications

• Ultralow forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long term

reliability

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

• Designed and qualified according to JEDEC®-JESD 47

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The VS-19TQ015... Schottky rectifier has been optimized for

ultralow forward voltage drop specifically for the OR-ing of

parallel power supplies. The proprietary barrier technology

allows for reliable operation up to 125 °C junction

temperature. Typical applications are in parallel switching

power supplies, converters, reverse battery protection, and

redundant power subsystems.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

IF(AV)

Rectangular waveform

VRRM

IFSM

tp = 5 μs sine

VF

19 Apk, TJ = 75 °C

TJ

Range

VALUES

19

15

700

0.32

-55 to +125

UNITS

A

V

A

V

°C

VOLTAGE RATINGS

PARAMETER

Maximum DC reverse voltage

Maximum working peak reverse voltage

SYMBOL

VR

VRWM

VS-19TQ015-M3

15

UNITS

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Maximum average forward current 

See fig. 5

SYMBOL

TEST CONDITIONS

IF(AV)

50 % duty cycle at TC = 80 °C, rectangular waveform

VALUES

19

Maximum peak one cycle

non-repetitive surge current 

See fig. 7

5 μs sine or 3 μs rect. pulse Following any rated load 700

IFSM

condition and with rated

10 ms sine or 6 ms rect. pulse VRRM applied

330

Non-repetitive avalanche energy

Repetitive avalanche current

EAS

TJ = 25 °C, IAS = 1.50 A, L = 6 mH

IAR

Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 3 x VR typical

6.75

1.50

UNITS

A

mJ

A

Revision: 11-Oct-17

1

Document Number: 94151

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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