1N4151(1999) データシートの表示（PDF） - Vishay Semiconductors
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1N4151 Datasheet PDF : 4 Pages
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Silicon Epitaxial Planar Diode
Applications
Extreme fast switches
1N4151
Vishay Telefunken
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
tp=1ms
VR=0
x l=4mm, TL=45°C
l=4mm, TL 25°C
Type
Symbol Value
Unit
VRRM
75
V
VR
50
V
IFSM
2
A
IFRM
500
mA
IF
300
mA
IFAV
150
mA
PV
440
mW
PV
500
mW
Tj
175
°C
Tstg –65...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=4mm, TL=constant
Symbol
Value
Unit
RthJA
350
K/W
Document Number 85523
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
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