1N4151-TAP データシートの表示（PDF） - Vishay Semiconductors
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1N4151-TAP Datasheet PDF : 4 Pages
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1N4151
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 50 mA
VF
880
1000
mV
Reverse current
VR = 50 V
IR
VR = 50 V, Tj = 150 °C
IR
14
50
nA
50
µA
Breakdown voltage
IR = 5 µA
V(BR)
75
V
Diode capacitance
VR = 0, f = 1 MHz,
VHF = 50 mV
CD
2
pF
IF = IR = 10 mA, iR = 1 mA
trr
4
ns
Reverse recovery time
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
2
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
Scattering Limit
10
1
0.1
0.01
VR = 50 V
0
40
80
120 160 200
94 9151
Tj - Junction Temperature (°C)
Figure 1. Reverse Current vs. Junction Temperature
3.0
2.5
f = 1 MHz
2.0
Tj = 25 °C
1.5
1.0
0.5
0
0.1
1
10
100
94 9153
VR - Reverse Voltage (V)
Figure 3. Diode Capacitance vs. Reverse Voltage
1000
100
Tj = 100 °C
10
Tj = 25 °C
1
0.1
0
94 9152
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85523
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.8, 17-Aug-10
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