CY7C1041BNV33(2011) データシートの表示（PDF） - Cypress Semiconductor

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CY7C1041BNV33
(Rev.:2011)

256 K × 16 Static RAM

Cypress Semiconductor 

CY7C1041BNV33

Data Retention Characteristics

Over the Operating Range

Parameter

Description

Conditions[9]

Min

VDR

ICCDR

tCDR[10]

tR[11]

VCC for Data Retention

Data Retention Current

Chip Deselect to Data

Retention Time

2.0

VCC = VDR = 2.0 V,

–

CE > VCC – 0.3 V,

VIN > VCC – 0.3 V or VIN < 0.3 V

0

Operation Recovery Time

tRC

Max

–

330

–

–

Unit

V

A

ns

ns

Data Retention Waveform

DATA RETENTION MODE

VCC

3.0 V

VDR > 2 V

3.0 V

tCDR

tR

CE

Notes

9. No input may exceed VCC + 0.5V.

10. Tested initially and after any design or process changes that may affect these parameters.

11. tr < 3 ns for the -12 and -15 speeds.

Document #: 001-06434 Rev. *C

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