CY62128EV30LL-55ZXE データシートの表示（PDF） - Cypress Semiconductor
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CY62128EV30LL-55ZXE Datasheet PDF : 12 Pages
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CY62128EV30 MoBL®
Capacitance
(For all packages)[8]
Parameter
Description
CIN
COUT
Input Capacitance
Output Capacitance
Thermal Resistance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
TSOP I
33.01
3.42
Max
Unit
10
pF
10
pF
SOIC
48.67
25.86
STSOP
32.56
3.59
Unit
°C/W
°C/W
Figure 4. AC Test Loads and Waveforms
R1
VCC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
VCC
10%
90%
90%
10%
R2
GND
Rise Time = 1 V/ns
Fall Time = 1 V/ns
Equivalent to: THEVENIN EQUIVALENT
OUTPUT
RTH
V
Parameters
R1
R2
RTH
VTH
2.50V
3.0V
Unit
16667
1103
Ω
15385
1554
Ω
8000
645
Ω
1.20
1.75
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
Conditions
Min Typ[3] Max Unit
VDR
ICCDR[7]
tCDR[8]
tR[9]
VCC for Data Retention
1.5
Data Retention Current
VCC = 1.5V,
Industrial/Auto-A
CE1 > VCC − 0.2V or CE2 < 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V
Auto-E
Chip Deselect to Data Retention
0
Time
Operation Recovery Time
tRC
V
3 μA
30 μA
ns
ns
Note
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.
Document #: 38-05579 Rev. *E
Page 4 of 12
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