MTM55N10 データシートの表示（PDF） - New Jersey Semiconductor
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MTM55N10 Datasheet PDF : 1 Pages
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20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MTM55N08
MTM55N10
MTM60N05
MTM60N06
65 and 60 AMPERE
N-CHANNEL TWOS
POWER FETs
n>S<on)«= 0.04 OHM
80 and 100 VOLTS
TJSIon) " 0.028 OHM
SO «id 60 VOLTS
, Dnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX; (973) 376-8960
MAXIMUM RATINGS
Riling
Symbol
Drain-Source Voltage
Drain-Gate Voltage
(RQS - 1 MO)
Gate-Source Voltage
Continuous
Non-repetitive (tD * 50 /is)
Drain Current
Continuous
Pulaed
Total Power
Dissipation @ TC <• 25'C
Derate above 25'C
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
Operating and Storage
Temperature Range
Tj. T,tg
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
R»JC
Maximum Lead Temp, for
TL
Soldering Purposes, 1/8*
from can for 5 seconds
MTM
80N05 •ON06 S5N08 SSN10 Unit
50
60
80
100 Vdc
SO
60
80
100 Vdc
±20
±40
60
55
300
275
250
2
-65 to 150
Vdc
Vpk
Adc
Wane
W/°C
•c
0.5
•c/w
275
•c
ELECTRICAL CHARACTERISTICS (TC - 25"C unless otherwise noted)
ChnwtertMto
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS - ", ID = 5.0 mA)
MTM60N05
MTM60N06
MTM5BN08
MTM55N10
Zero Gate Voltage Drain Current
(VDS - Rated VDS. VGS = «>
TC » 125°C
Gate-Body Leakage Current
(VQs = 20 Vdc. VDS = 0)
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VGS. 'o - 1 mA), VDS = VGS
TJ = 100-c
Static Drain-Source On-Resistance
(VGS = 10Vdc, ID = 30 Add
(VGS - 10 Vdc. ID = 27.5 Adc)
MTM60NOS/MTM60N06
MTMSSNOB/MTMSSNIO
Drain-Source On-Voltage (VGS * 10 V)
«D - 60 Adcl
MTM60N05/MTM60N06
(ID = 30 Adc, Tj = 100°C)
MTM60N05/MTM60N06
(ID - 55 Adc)
MTM55N08/MTM55N10
(ID - 27.5 Adc. TC - 100X)
MTM55N08/MTM5SN10
Forward Transconductance
(VDS - IS V, ID - 30 A)
(VDS - is v. ID - 27.5 A)
MTM60N05/MTM60N06
MTMSSNOB/MTMSSNIO
Symbol
Mln
VBRIDSSI so
60
80
100
IDSS
—
—
IGSS
_
Vdc
—
—
——
< nAdc
10
100
100
nAdc
vGS(th)
2
1.5
rDS(on)
-
VDS(on)
-
9FS
10
10
4.5
4
0.028
0.04
1.98
1.68
2.6
2.2
~
Vdc
Ohm
Vdc
mhos
WTO
t DMEIISiaMGAMItOKUNCMiHUMS
msM. na.
1. CONTOUMG DMENSKM: MOf
TO-204M
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to Be hoth accurateand reliable at the time ot'eoing
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheetsare current before placing orders.
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