HVM12-350(2016) データシートの表示（PDF） - getedz electronics
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HVM12-350 Datasheet PDF : 2 Pages
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HVM12-350
350mA 12kV -High Voltage Silicon Rectifiers Diodes
HVGT high voltage silicon rectifier diodes is
made of high quality glass passivated chip and high
reliability epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. Low frequency .
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Microwave circuit generator.
2. High current and high voltage circuit.
3. General purpose high voltage rectifier.
4. Other .
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.2 grams (approx).
SIZE: (Unit:mm)
HVGT NAME: DO-721
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
VRRM
Average Output Current
IF
Suege Current
IFSM
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Ta=25°C;
Ta=55°C; Resistive Load
Ta=25°C; 1/2 Sine(60Hz) ; 8.3mS
Data Value Units
12
kV
350
mA
30
A
-40~+150
°C
125
°C
-40~+150
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Data value Units
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF
at 25°C;IF =IF(AV)
12
V
IR1
at 25°C;VR =VRRM
2.0
uA
IR2
at 100°C;VR =VRRM
50
uA
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
--
nS
CJ
at 25°C; VR=0V; f=1MHz
--
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638
2016 1 / 2
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