TC1401N データシートの表示（PDF） - Transcom, Inc.

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TC1401N

0.5 W High Linearity and High Efficiency GaAs Power FETs

Transcom, Inc. 

ABSOLUTE MAXIMUM RATINGS (TA=25 °C)

Symbol

VDS

VGS

IDS

Pin

PT

TCH

TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

RF Input Power, CW

Continuous Dissipation

Channel Temperature

Storage Temperature

Rating

12 V

-5 V

IDSS

26 dBm

1.9 W

175 °C

- 65 °C to +175 °C

CHIP DIMENSIONS

380± 12

D

470± 12

S GS

TC1401N

REV5_20070502

Units: Micrometers

Chip Thickness: 76

Gate Pad: 59.5 x 76.0

Drain Pad: 86.0 x 76.0

Source Pad: 80 x 86

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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