HMC-ALH313 データシートの表示（PDF） - Analog Devices

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HMC-ALH313

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz

Analog Devices 

v02.0209

1

Typical Applications

This HMC-ALH313 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

• Test Equipment & Sensors

• Military & Space

Functional Diagram

HMC-ALH313

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 27 - 33 GHz

Features

Noise Figure: 3 dB

Gain: 20 dB

P1dB Output Power: +12 dBm

Supply Voltage: +2.5V @ 52 mA

Die Size: 1.80 x 0.73 x 0.1 mm

General Description

The HMC-ALH313 is a three stage GaAs MMIC

HEMT Low Noise Amplifier die which operates bet-

ween 27 and 33 GHz. The amplifier provides 20 dB

of gain, a 3 dB noise figure and +12 dBm of output

power at 1 dB gain compression while requiring only

52 mA from a +2.5V supply voltage. This amplifier die

is ideal for use as a LNA or driver amplifier, and may

be easily integrated into Multi-Chip-Modules (MCMs)

due to its small size (1.30 mm2) .

Electrical Specifications ,[1] TA = +25° C, Vdd= 2.5V, Idd = 52mA [2]

Parameter

Min.

Typ.

Frequency Range

27 - 33

Gain

18

20

Gain Variation over Temperature

0.03

Noise Figure

3

Input Return Loss

12

Output Return Loss

14

Output Power for 1 dB Compression

10

12

Supply Current

52

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Iddtotal = 52 mA

Max.

3.5

Units

GHz

dB

dB / °C

dB

dB

dB

dBm

mA

1 - 150

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