HMC-ALH216 データシートの表示（PDF） - Analog Devices
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HMC-ALH216 Datasheet PDF : 6 Pages
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v03.0209
1
Typical Applications
This HMC-ALH216 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
HMC-ALH216
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Features
Noise Figure: 2.5 dB @ 20 GHz
Gain: 18 dB
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 90 mA
Die Size: 2.25 x 1.58 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH216 is a GaAs MMIC HEMT Wideband
Low Noise Amplifier die which operates between 14
and 27 GHz. The amplifier provides 18 dB of gain,
2.5 dB noise figure and +14 dBm of output power at
1 dB gain compression while requiring only 90 mA
from a +4V supply voltage. The HMC-ALH216 amplifier
is ideal for integration into Multi-Chip-Modules
(MCMs) due to its small size.
Electrical Specifications*, TA = +25° C, Vdd= +4V
Parameter
Min.
Frequency Range
Gain
14
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.)
*Unless otherwise indicated, all measurements are from probed die
Typ.
14 - 27
18
0.02
2.7
15
15
90
Max.
4.5
Units
GHz
dB
dB / °C
dB
dB
dB
mA
1 - 126
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