HMC-ALH216 データシートの表示（PDF） - Analog Devices

部品番号

コンポーネント説明

メーカー

HMC-ALH216

GaAs HEMT MMIC LOW NOISE AMPLIFIER

Analog Devices 

v03.0209

1

Absolute Maximum Ratings

Drain Bias Voltage

Gate Bias Voltage

RF Input Power

Channel Temperature

Continuous Pdiss (T=85°C)

(derate 14.9 mW/C above 85°C)

Thermal Resistance

(Channel to die bottom)

Storage Temperature

Operating Temperature

+5.5 Vdc

-1 to +0.3 Vdc

6 dBm

180 °C

1.4 W

67 °C/W

-65 to +150 °C

-55 to +85 °C

Outline Drawing

HMC-ALH216

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 14 - 27 GHz

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

1 - 128

Die Packaging Information [1]

Standard

Alternate

GP-1 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. TYPICAL BOND PAD IS .004” SQUARE.

3. BACKSIDE METALLIZATION: GOLD.

4. BACKSIDE METAL IS GROUND.

5. BOND PAD METALLIZATION: GOLD.

6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

7. OVERALL DIE SIZE ±.002”

IrrliniecgfseohpntrsomsenoasftiisibtohingilrirtdyafunpirstnaeairdstsihesbesuyFdmthiomeba2dtyprm0lbiAcpyaanyAAtariorlnioelncapgsluoeohlDrgt,eofaDrvtodheimcevReericwistloesiissivusaefseodbeur.nrei,dtSlyiseepC,vureesacahdeinf,niyectnoadopltmriaboftentoeossrnatasfcnouopcyrburljipernadaacfrttct,eientnoegMatecnrmhdiogAaehrnrntedgst0lseiaoe1obwffr8lAieptshn.a2oa,tHue4loptongwntsloDeePotviecraehveori,.cstoheNneesnoor. ec:oFOP9nohn7rotean8pTecr-ei:c2tc7eh5H8,n10iod-t-3leto32ilgit9v3eye-44rWMy73,a0iya0c,nF•Prdao.OOxtwor.d:Baep9ovrla7xeoc8n9eCl1-in02ooe6r5dr,a0peNtr-owos3:rrww3aAwo7tno.iaao3dlnon,agM:loADge.0cv2oic0me6s2,-9In10c.6,

Order On-line Trademarks and registered trademarks are the property of their respective owners. at www.Ahpitptliitcea.tcioon mSupport: Phone: 1-800-ANALOG-D

Share Link: