TSM1N80CWRPG データシートの表示（PDF） - TSC Corporation
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TSM1N80CWRPG Datasheet PDF : 7 Pages
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TSM1N80
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA
BVDSS
800
Drain-Source On-State Resistance VGS = 10V, ID = 0.15A
RDS(ON)
--
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
3
Zero Gate Voltage Drain Current
VDS = 800V, VGS = 0V
IDSS
--
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
Forward Transconductance
VDS = 40V, ID = 0.1A
gfs
--
Diode Forward Voltage
Dynamic (Note 3)
IS = 0.2A, VGS = 0V
VSD
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
--
VDS = 640V, ID = 0.3A,
Qgs
--
VGS = 10V
Qgd
--
Input Capacitance
Ciss
--
Output Capacitance
VDS = 25V, VGS = 0V,
Coss
--
f = 1.0MHz
Reverse Transfer Capacitance
Crss
--
Switching (Note 4)
Turn-On Delay Time
td(on)
--
Turn-On Rise Time
Turn-Off Delay Time
VGS = 10V, ID = 0.3A,
tr
--
VDS = 400V, RG = 25Ω
td(off)
--
Turn-Off Fall Time
tf
--
Note:
1. Pulse test: pulse width <=300uS, duty cycle <=2%
2. (VDD = 50V, IAS=0.8A, L=170mH, RG=25Ω)
3. For design reference only, not subject to production testing.
4. Switching time is essentially independent of operating temperature.
TYP
--
18
--
--
--
0.36
--
5
1
2
155
20
2.7
10
20
16
25
MAX UNIT
--
V
21.6
Ω
5
V
25
µA
±10
µA
--
S
1.4
V
6
--
nC
--
200
26
pF
4
30
50
ns
45
60
Document Number: DS_P0000037
2
Version: B15
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