HMC594LC3B データシートの表示（PDF） - Analog Devices

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HMC594LC3B

GaAs PHEMT MMIC LOW NOISE AMPLIFIER

Analog Devices 

v03.0514

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (RFIN)(Vdd = +6V)

Channel Temperature

Continuous Pdiss (T = 85 °C)

(derate 10 mW/°C above 85 °C)

Thermal Resistance

(channel to ground paddle)

Storage Temperature

Operating Temperature

7V

+15 dBm

175 °C

0.9 W

100 °C/W

-65 to +150 °C

-40 to +85 °C

Outline Drawing

HMC594LC3B

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 2 - 4 GHz

Typical Supply Current vs. Vdd

Vdd (V)

+5.5

+6.0

+6.5

Idd (mA)

97

100

103

Note: Ampliier will operate over full voltage range shown above

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni.

3. DIMENSIONS ARE IN INCHES [MILLIMETERS].

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

Package Information

Part Number

Package Body Material

HMC594LC3B

Alumina, White

[1] Max peak relow temperature of 260 °C

[2] 4-Digit lot number XXXX

Lead Finish

Gold over Nickel

MSL Rating

MSL3 [1]

Package Marking [2]

H594

XXXX

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