2SB1274 データシートの表示（PDF） - New Jersey Semiconductor
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2SB1274 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1274
DESCRIPTION
• High Reliability
• Low Collector Saturation Voltage ''
:VcE(satr-1.0V(Max)@lc=-2A
• Wide Area of Safe Operation
APPLICATIONS
• Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Total Power Dissipation
@ Ta=25"C
PC
Total Power Dissipation
@ Tc=25 \:
Tj
Junction Temperature
-8
A
2
W
20
150
C
Tstg
Storage Temperature Range
-55-150
"C
PIN: \e
2 Collector
„ ..
3 Emitter
-~
TO-220F package
e
- C-
-s-
'6 "•
f
u
A
i ••
H
^ ft -
K
• •D
- H•
j ..
mm
DIM MIN MAX
A 14.95 15.05
B 10.00 10.10
I' ' 4.40 4.60
D 0.75 0.90
F 3.10 3.30
H 3.70 3.90
j 0.50 , 0.70 I
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
0 2.70 2.90
R 2.20 2.40
5 2.65 2.85
It 6.40 6.60
N.I Semi-Couiliictors reserves the right to change test conditions, parameter limits and puckilge dimensions without
notice. Information furnished by N.I Semi-Conductors is believed 10 he both accurate und reliable at the time of goinc
lo press. I hmever. N.I Semi-Conductors assumes no responsibilit\r an> errors or omissions discovered in its use.
N.I Semi-Conductors enauirmcs customers to verify that datasheets ;ire current before placing orders.
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