2N3904 データシートの表示（PDF） - Renesas Electronics

部品番号

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2N3904

Silicon NPN Epitaxial General Purpose Amplifier

Renesas Electronics 

2N3904

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Base cutoff current

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Gain bandwidth product

Collector output capacitance

Collector input capacitance

Noise figure

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

IBL

ICEX

hFE

VCE(sat)

VBE(sat)

fT

Cob

Cib

NF

Min

60

40

6

—

—

40

70

100

60

30

—

—

0.65

—

—

—

—

—

Typ

—

—

—

—

—

—

—

—

—

—

—

—

—

—

540

1.9

5.9

1.0

Max

—

—

—

50

50

—

—

300

—

—

0.2

0.3

0.85

0.95

—

—

—

—

Unit

V

V

V

nA

nA

—

—

—

—

—

V

V

V

V

MHz

pF

pF

dB

(Ta = 25°C)

Test Conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCE = 30 V, VEB = 3 V

VCE = 30 V, VEB = 3 V

VCE = 1 V, IC = 100 µA

VCE = 1 V, IC = 1 mA

VCE = 1 V, IC = 10 mA

VCE = 1 V, IB = 50 mA

VCE = 1 V, IB = 100 mA

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

VCE = 20 V, IC = 10 mA

VCE = 5 V, IE = 0, f = 1 MHz

VCE = 0.5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 0.1 mA,

f = 1 MHz, Rg = 1 kΩ

Rev.1.00, Jul.22.2004, page 2 of 5

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