BF996S データシートの表示（PDF） - Temic Semiconductors
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BF996S Datasheet PDF : 5 Pages
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BF996S
Electrical DC Characteristics
Tamb = 25°C
Parameters / Test Conditions
Type
Symbol Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
ID = 10 mA, –VG1S = –VG2S = 4 V
V(BR)DS
20
Gate 1-source breakdown voltage
±IG1S = 10 mA, VG2S = VDS = 0
±V(BR)G1SS
8
Gate 2-source breakdown voltage
±IG2S = 10 mA, VG1S = VDS = 0
±V(BR)G2SS
8
Gate 1-source leakage current
±VG1S = 5 V, VG2S = VDS = 0
±IG1SS
Gate 2-source leakage current
±VG2S = 5 V, VG1S = VDS = 0
±IG2SS
Drain current
VDS = 15 V, VG1S = 0, VG2S = 4 V
BF 996 S
IDSS
4
BF 996 SA IDSS
4
BF 996 SB
IDSS
9.5
Gate 1-source cut-off voltage
VDS = 15 V, VG2S = 4 V, ID = 20 mA
–VG1S(OFF)
Gate 2-source cut-off voltage
VDS = 15 V, VG1S = 0, ID = 20 mA
–VG2S(OFF)
V
14
V
14
V
50
nA
50
nA
18
mA
10.5
mA
18
mA
2.5
V
2.0
V
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz, Tamb = 25°C
Parameters / Test Conditions
Type
Symbol Min.
Typ.
Max.
Unit
Forward transadmittance
y21s
15
18.5
mS
Gate 1 input capacitance
Cissg1
2.2
2.6
pF
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Feedback capacitance
Cissg2
Crss
1.1
pF
25
35
fF
Output capacitance
Coss
10.8
1.2
pF
Power gain
VDS = 15 V, ID = 10 mA, VG2S = 4 V,
gS = 2 mS, gL = 0.5 mS, f = 200 MHz
Gps
25
dB
gS = 3.3 mS, gL = 1 mS, f = 800 MHz
Gps
18
dB
AGC range
VDS = 15 V, VG2S = 4 to –2 V,
f = 800 MHz
∆Gps
40
dB
Noise figure
VDS = 15 V, ID = 10 mA, VG2S = 4 V,
gS = 2 mS, f = 200 MHz
gS = 3.3 mS, f = 800 MHz
F
1.0
dB
F
1.8
dB
2 (5)
TELEFUNKEN Semiconductors
Rev. A1, 17-Apr-96
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