BF996S データシートの表示（PDF） - Siemens AG

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BF996S

Silicon N Channel MOSFET Tetrode

Siemens AG 

BF 996 S

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

AC Characteristics

Forward transconductance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz

Gate 1 input capacitance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Gate 2 input capacitance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Feedback capacitance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Output capacitance

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Power gain

VDS = 15 V, ID = 10 mA

f = 200 MHz, GG = 2 mS, GL = 0.5 mS

(test circuit 1)

Power gain

VDS = 15 V, ID = 10 mA

f = 800 MHz, GG = 2.5 mS, GL = 0.8 mS

(test circuit 2)

Noise figure

VDS = 15 V, ID = 10 mA

f = 200 MHz, GG = 2 mS, GL = 0.5 mS

(test circuit 1)

Noise figure

VDS = 15 V, ID = 10 mA

f = 800 MHz, GG = 2.5 mS, GL = 0.8 mS

(test circuit 2)

Gain control range

VDS = 15 V, VG2S = 4 … – 2 V, f = 800 MHz

(test circuit 2)

Symbol

Values

Unit

min. typ. max.

gfs

15 18 –

mS

Cg1ss

–

2.3 –

pF

Cg2ss

–

1.1 –

Cdg1

–

25 –

fF

Cdss

–

0.8 –

pF

Gps

–

25 –

dB

Gps

–

18 –

F

–

1

–

F

–

1.8 –

∆ Gps

40

–

–

Semiconductor Group

3

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