BFQ71 データシートの表示（PDF） - Siemens AG

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BFQ71

NPN Silicon RF Transistor

Siemens AG 

BFQ 71

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2 V, IC = 0

DC current gain

IC = 5 mA, VCE = 6 V

IC = 20 mA, VCE = 6 V

Collector-emitter saturation voltage

IC = 30 mA, IB = 3 mA

Base-emitter voltage

IC = 5 mA, VCE = 6 V

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 15

ICB0

–

IEB0

–

hFE

40

40

VCEsat

–

VBE

–

–

–

V

–

50 nA

–

10

µA

–

90 250

100 –

0.16 0.4 V

0.78 –

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