Q62702-F776 データシートの表示（PDF） - Siemens AG
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Q62702-F776 Datasheet PDF : 14 Pages
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NPN Silicon RF Transistor
q For low-distortion broadband amplifiers up to 2 GHz
at collector currents from 10 mA to 30 mA.
q Hermetically sealed ceramic package.
q HiRel/Mil screening available.
q CECC-type available: CECC 50002/263.
BFQ 72
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 72
Marking
72
Ordering Code
(tape and reel)
Q62702-F776
Pin Configuration
1 2 34
B ECE
Package1)
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 112 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point3)
Symbol
VCE0
VCES
VCB0
VEB0
IC
IB
Ptot
Tj
TA
Tstg
Values
Unit
15
V
20
20
2.5
50
mA
10
350
mW
175
˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
≤ 260
K/W
≤ 180
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
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