ZVN4306G データシートの表示（PDF） - Zetex => Diodes

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ZVN4306G

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex => Diodes 

ZVN4306G

TYPICAL CHARACTERISTICS

VGS=

20V 12V 10V 9V 8V

12

11

7V

10

9

8

6V

7

6

5

5V

4

3

2

4V

1

3.5V

0

3V

0 1 2 3 4 5 6 7 8 9 10

VGS=3V 3.5V

10

5V 6V

1.0

8V

10V

0.1

0.1

1

10

100

VDS - Drain Source Voltage (Volts)

ID-Drain Current (Amps)

Saturation Characteristics

On-resistance v drain current

2.6

2.4

VGS=10V

2.2

ID=3A

2.0

1.8

1.6

1.4

1.2

Drain-Source Resistance RDS(on)

VGS=VDS

1.0

ID=1mA

0.8

0.6

Gate Threshold Voltage VGS(TH)

-50 -25 0 25 50 75 100 125 150 175 200 225

Tj-Junction Temperature (°C)

Normalised RDS(on) and VGS(th) v Temperature

500

400

300

200

Ciss

100

Coss

0

Crss

0 10 20 30 40 50 60 70 80

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

5

4

3

VDS=10V

2

1

0

0 2 4 6 8 10 12 14 16 18 20

ID(on)- Drain Current (Amps)

Transconductance v drain current

16

14

ID=3A

12

10

8

6

VDD=

20V

40V

60V

4

2

0

0 1 2 3 4 5 6 7 8 9 10 11 12

Q-Charge (nC)

Gate charge v gate-source voltage

3 - 412

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