ZVNL120GTA データシートの表示（PDF） - Diodes Incorporated.
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ZVNL120GTA Datasheet PDF : 6 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS = 10V, TA = +25°C)
Pulsed Drain Current
Symbol
VDSS
VGSS
ID
IDM
Value
200
±20
320
2
ZVNL120G
Unit
V
V
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
TJ, TSTG
Value
2.0
-55 to +150
Unit
W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
200
-
-
V VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
-
-
10
100
µA VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, T = +125°C
Gate-Source Leakage
ON CHARACTERISTICS
IGSS
-
-
100
nA VGS = ±20V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
0.5
-
1.5
V VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance (Note 6)
-
RDS(ON)
-
-
10
Ω VGS = 5V, ID = 250mA
-
10
Ω VGS = 3V, ID = 125mA
Forward Transconductance (Notes 6 & 7)
gfs
200
-
-
mS VDS = 25V, ID = 250mA
On-State Drain Current (Note 6)
DYNAMIC CHARACTERISTICS (Note 7)
ID(ON)
500
-
-
mA VDS = 25V, VGS = 5V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Ciss
-
Coss
-
Crss
-
tD(ON)
-
tR
-
tD(OFF)
-
tF
-
-
85
pF
-
20
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
-
7
pF
-
8
ns
-
8
ns
-
20
ns VDD = 25V, ID = 250mA
-
12
ns
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. Measured under pulsed conditions. Pulse width≦300µs. Duty cycle ≦2%.
7. Sample test.
8. Switching times measured with 50source impedance and <5ns rise time on a pulse generator.
ZVNL120G
Document number: DS33388 Rev. 3 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
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