ZXMN6A08E6Q データシートの表示（PDF） - Diodes Incorporated.
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ZXMN6A08E6Q Datasheet PDF : 8 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current VGS = 10V
Pulsed Drain Current
VGS= 10V
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 7)
TA = +70°C (Note 7)
(Note 6)
(Note 8)
(Note 7)
(Note 8)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
ZXMN6A08E6Q
Value
Unit
60
V
20
V
3.5
2.8
A
2.8
16
A
2.6
A
16
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
(Note 6)
(Note 7)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 7)
Symbol
PD
RθJA
TJ, TSTG
Value
1.1
8.8
1.7
13.6
113
73
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t 10 seconds.
8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
2 of 8
www.diodes.com
March 2015
© Diodes Incorporated
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