ZXM64N035GTA データシートの表示（PDF） - Diodes Incorporated.

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ZXM64N035GTA

35V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

OBSOLETE - PLEASE USE ZXMN4A06G

ZXM64N035G

ABSOLUTE MAXIMUM RATING

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous

Drain

Current

(VGS=10V;

(VGS=10V;

(VGS=10V;

TTTAAA===272505°°°CCC)))(((bba)))

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode)(c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

35

Ϯ20

6.7

5.4

4.8

30

2.4

30

2.0

16

3.9

31

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to Ambient (a)

Junction to Ambient (b)

SYMBOL

RθJA

RθJA

VALUE

62.5

32

UNIT

°C/W

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.

ISSUE 1 - JUNE 2004

2

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