ZXM64N035GTA データシートの表示（PDF） - Diodes Incorporated.

部品番号

コンポーネント説明

メーカー

ZXM64N035GTA

35V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

OBSOLETE - PLEASE USE ZXMN4A06G

ZXM64N035G

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

35

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

1.0

Static Drain-Source On-State Resistance (1) RDS(on)

Forward Transconductance (1)(3)

gfs

4.3

DYNAMIC (3)

V

1

␮A

100

nA

V

0.050 ⍀

0.062 ⍀

S

ID=250µA, VGS=0V

VDS=35V, VGS=0V

VGS=Ϯ20V, VDS=0V

ID=250␮A, VDS= VGS

VGS=10V, ID=3.7A

VGS=4.5V, ID=1.9A

VDS=10V,ID=1.9A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

950

pF

VDS=25V, VGS=0V,

200

pF f=1MHz

50

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

Reverse Recovery Time (3)

Reverse Recovery Charge (3)

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

trr

Qrr

4.2

4.6

20.5

8

27

5

4.5

ns

ns

VDD =15V, ID=3.7A

ns

RG=6.0⍀, VGS=10V

ns

nC

nC

VDS=24V,VGS=10V,

ID=3.7A

nC

0.95 V

TJ=25ЊC, IS=3.7A,

VGS=0V

24.5

19.1

ns TJ=25ЊC, IF=3.7A,

di/dt= 100A/␮s

nC

NOTES

(1) Measured under pulsed conditions. Width=300␮s. Duty cycle Յ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - JUNE 2004

3

Share Link: