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VUB51 データシートの表示(PDF) - IXYS CORPORATION

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VUB51
IXYS
IXYS CORPORATION IXYS
VUB51 Datasheet PDF : 2 Pages
1 2
Symbol
I
R
VF
VT0
rT
RthJH
VBR(CES)
V
GE(th)
I
GES
I
CES
VCEsat
tSC
(SCSOA)
IC
(RBSOA)
C
ies
t
d(on)
td(off)
tfi
Eon
Eoff
RthJH
IR
VF
VT0
rT
IRM
trr
R
thJH
dS
dA
a
Test Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
V =V ,
R
RRM
VR = VRRM,
IF = 25 A,
T=
VJ
25°C
TVJ = 150°C
TVJ = 25°C
0.1 mA
3 mA
1.16 V
For power-loss calculations only
TVJ = 150°C
0.8 V
12.5 mW
per diode
1.5 K/W
VGS = 0 V, IC = 3 mA
I = 10 mA
C
1200
5
V
GE
= ± 20 V
T
VJ
=
25°C,
V = 0.8 V
CE
CES
TVJ = 125°C, VCE = 0.8 VCES
VGE = 15 V, IC = 25 A
VGE = 15 V, VCE = 0.6 VCES, TVJ = 125°C,
RG = 4.7 W, non repetitive
VGE = 15 V, VCE = 0.8 VCES, TVJ = 125°C,
R
G
=
4.7
W,
Clamped
Inductive
load,
L
=
100
mH
V = 25 V, f = 1 MHz, V = 0 V
2.9
CE
GE
VCE = 600 V, IC = 25 A
VGE = 15 V, RG = 4.7 W
Inductive load; L = 100 mH
TVJ = 125°C
100
220
1600
3.5
12
V
7.5 V
500 nA
250 mA
1 mA
3.5 V
10 ms
50 A
nF
ns
ns
ns
mJ
mJ
VR = VRRM, TVJ = 25°C
V
R
= 800 V,
T
VJ
=150°C
IF = 12 A, TVJ = 25°C
For power-loss calculations only
TVJ = 150°C
IF = 25 A, -diF/dt = 100 A/ms
VR = 100 V TJ = 100°C
IF = 1 A, -diF/dt = 100 A/ms
V = 30 V
R
T
J
=
100°C
1 K/W
0.2 mA
6 mA
2.7 V
1.65 V
46 mW
6.5
7A
50 70 ns
3.12 K/W
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7 mm
9.4 mm
50 m/s2
© 2000 IXYS All rights reserved
VUB 51
2-2

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